With the addition of 1.5% InAs to the alloy, In 0.015Ga 0.985As becomes latticed-matched to the Ge substrate, reducing stress in subsequent deposition of GaAs.Įlectronic and optical properties įig.3 Photoluminescence of n-type and p-type GaInAs Properties of single crystal GaInAs Single crystal GaInAs GaAs is lattice-mismatched to germanium (Ge) by 0.08%. In that case special measures have to be taken to avoid mechanical strain from differences in lattice constants. This composition has an optical absorption edge at 0.75 eV, corresponding to a cut-off wavelength of λ=1.68 μm at 295 K.īy increasing the mole fraction of InAs further compared to GaAs, it is possible to extend the cut-off wavelength up to about λ=2.6 μm. In order to match the lattice constant of InP and avoid mechanical strain, InĠ.47As is used. Most InGaAs devices are grown on indium phosphide (InP) substrates. The optical and mechanical properties of InGaAs can be varied by changing the ratio of InAs and GaAs, In Today, most commercial devices are produced by MO-CVD or by MBE. Single crystal material in thin-film form can be grown by epitaxy from the liquid-phase (LPE), vapour-phase (VPE), by molecular beam epitaxy (MBE), and by metalorganic chemical vapour deposition (MO-CVD). Pearsall and co-workers were the first to describe single-crystal epitaxial growth of In 0.53Ga 0.47As on (111)-oriented and on (100)-oriented InP substrates.
Single crystal material is required for electronic and photonic device applications. GaInAs is not a naturally-occurring material. According to IUPAC standards the preferred nomenclature for the alloy is Ga xIn 1-xAs where the group-III elements appear in order of increasing atomic number, as in the related alloy system Al xGa 1-xAs.īy far, the most important alloy composition from technological and commercial standpoints is Ga 0.47In 0.53As, which can be deposited in single crystal form on indium phosphide (InP). Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably.
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